SGD02N120BUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pbfree Code :

No

Current - Collector Pulsed (Icm) :

9.6A

IGBT Type :

NPT

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Switching Energy :

220μJ

Packaging :

Tape and Reel (TR)

Power - Max :

62W

Surface Mount :

yes

Case Connection :

COLLECTOR

Polarity/Channel Type :

N-Channel

Configuration :

Single

Voltage - Collector Emitter Breakdown (Max) :

1200V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

POWER CONTROL

Factory Lead Time :

17 Weeks

Test Condition :

800V, 2A, 91 Ω, 15V

Current - Collector (Ic) (Max) :

6.2A

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn Off Time-Nom (toff) :

375 ns

Terminal Form :

Gull wing

Base Part Number :

*GD02N120

Number of Terminations :

2

Turn On Time :

40 ns

Input Type :

Standard

Td (on/off) @ 25°C :

23ns/260ns

Qualification Status :

Not Qualified

Pin Count :

3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gate Charge :

11nC

Published :

2007

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

3.6V @ 15V, 2A

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

JEDEC-95 Code :

TO-252AA

Terminal Position :

Single