SGD04N60BUMA1
- Mfr.Part #
- SGD04N60BUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- SGD04N60 - FAST IGBT IN NPT-TECH
- Stock
- 2,328
- In Stock :
- 2,328
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Transistor Application :
- POWER CONTROL
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Td (on/off) @ 25°C :
- 22ns/237ns
- Current - Collector Pulsed (Icm) :
- 19A
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Configuration :
- Single
- Published :
- 2007
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- Polarity/Channel Type :
- N-Channel
- Additional Feature :
- LOW CONDUCTION LOSS
- Pbfree Code :
- No
- JEDEC-95 Code :
- TO-252AA
- IGBT Type :
- NPT
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Factory Lead Time :
- 26 Weeks
- Turn Off Time-Nom (toff) :
- 368 ns
- Input Type :
- Standard
- RoHS Status :
- RoHS Compliant
- Case Connection :
- COLLECTOR
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 4A
- Number of Terminations :
- 2
- Terminal Position :
- Single
- Turn On Time :
- 38 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Current - Collector (Ic) (Max) :
- 9.4A
- Switching Energy :
- 131µJ
- Test Condition :
- 400V, 4A, 67 Ω, 15V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Gate Charge :
- 24nC
- Power - Max :
- 50W
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Qualification Status :
- Not Qualified
- Datasheets
- SGD04N60BUMA1

SGD04N60BUMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
SGD04N60BUMA1 Description
The SGD04N60BUMA1 is a Fast IGBT in NPT-technology. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
SGD04N60BUMA1 Features
-
Pb-free lead plating; RoHS compliant
-
Qualified according to JEDEC2 for target applications
-
75% lower Eoff compared to previous generation combined with low conduction losses
-
Short circuit withstand time – 10 μs
-
Designed for:
- Motor controls
- Inverter
-
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
SGD04N60BUMA1 Applications
-
It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
-
It is used in UPS (Uninterruptible Power Supply) system.
-
It is used in AC and DC motor drives offering speed control.
-
It is used in chopper and inverters.
-
It is used in solar inverters.
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