SD1013-03

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Application :

AMPLIFIER

Packaging :

Bulk

Operating Temperature :

200°C TJ

Terminal Finish :

TIN LEAD

Number of Pins :

4

Collector Emitter Breakdown Voltage :

35V

Collector-Base Capacitance-Max :

15pF

Pbfree Code :

No

ECCN Code :

EAR99

Max Power Dissipation :

13W

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

JESD-609 Code :

e0

Terminal Form :

Flat

RoHS Status :

RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 200mA 5V

Transition Frequency :

150MHz

Frequency - Transition :

150MHz

Polarity/Channel Type :

NPN

Terminal Position :

Radial

Gain :

10dB

Collector Base Voltage (VCBO) :

65V

Radiation Hardening :

No

Number of Elements :

1

Mount :

Chassis Mount, Screw

Highest Frequency Band :

VERY HIGH FREQUENCY B

Mounting Type :

Chassis Mount

Max Collector Current :

1A

Transistor Type :

NPN

Additional Feature :

High Reliability

Collector Emitter Voltage (VCEO) :

35V

Number of Terminations :

4

Published :

2001

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Transistor Element Material :

SILICON

Package / Case :

M113

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

13W