SCT2450KEC
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- Mfr.Part #
- SCT2450KEC
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 1200V 10A TO247
- Stock
- 7,459
- In Stock ：
- 7,459
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 10A
- Vgs (Max) :
- +22V, -6V
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 18V
- Fall Time (Typ) :
- 34 ns
- Height :
- 5.03mm
- Operating Temperature :
- 175°C TJ
- Length :
- 15.9mm
- Packaging :
- Tube
- Mount :
- Through Hole
- Factory Lead Time :
- 19 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 463pF @ 800V
- Width :
- 20.95mm
- Drain to Source Breakdown Voltage :
- 1.2kV
- Resistance :
- 585mOhm
- Turn-Off Delay Time :
- 38 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Package / Case :
- TO-247-3
- Rise Time :
- 17ns
- Rds On (Max) @ Id, Vgs :
- 585m Ω @ 3A, 18V
- REACH SVHC :
- No SVHC
- Nominal Vgs :
- 4 V
- Power Dissipation-Max :
- 85W Tc
- Gate to Source Voltage (Vgs) :
- 22V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 1200V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2012
- Vgs(th) (Max) @ Id :
- 4V @ 900μA
- Turn On Delay Time :
- 19 ns
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 25A
- Threshold Voltage :
- 4V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Number of Elements :
- 1
- Datasheets
- SCT2450KEC
N-Channel Tube 585m Ω @ 3A, 18V +22V, -6V 463pF @ 800V 27nC @ 18V 1200V TO-247-3
SCT2450KEC Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 463pF @ 800V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10A.With a drain-source breakdown voltage of 1.2kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1.2kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 38 ns.Peak drain current for this device is 25A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (18V) reduces this device's overall power consumption.
SCT2450KEC Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 25A.
a threshold voltage of 4V
a 1200V drain to source voltage (Vdss)
SCT2450KEC Applications
There are a lot of ROHM Semiconductor
SCT2450KEC applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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