SCT20N120H
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- Mfr.Part #
- SCT20N120H
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 1200V 20A H2PAK-2
- Stock
- 10,375
- In Stock ：
- 10,375
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- +25V, -10V
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 175W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 400V
- Package / Case :
- TO-247-3
- Drain to Source Voltage (Vdss) :
- 1200V
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 10A, 20V
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~200°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 20V
- Datasheets
- SCT20N120H
N-Channel Tape & Reel (TR) 290m Ω @ 10A, 20V +25V, -10V 650pF @ 400V 45nC @ 20V 1200V TO-247-3
SCT20N120H Description
This kind of silicon carbide power MOSFET is produced by using the advanced and innovative characteristics of wide band gap materials. This results in unparalleled on-resistance per unit area and very good switching performance, almost independent of temperature. The excellent thermal properties of silicon carbide materials allow designers to use industry standard profiles with significantly improved thermal properties. These characteristics make the equipment very suitable for high efficiency and high power density applications.
SCT20N120H Features
? Very tight variation of on-resistance vs. temperature
? Very high operating junction temperature capability (TJ = 175 °C)
? Very fast and robust intrinsic body diode
? Low capacitance
SCT20N120H Applications
? Solar inverters, UPS
? Motor drives
? High voltage DC-DC converters
? Switch mode power supplies
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