SCT2280KEC
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- Mfr.Part #
- SCT2280KEC
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 1200V 14A TO247
- Stock
- 10,408
- In Stock ：
- 10,408
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 667pF @ 800V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Package / Case :
- TO-247-3
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 1.2kV
- Continuous Drain Current (ID) :
- 14A
- Threshold Voltage :
- 4V
- Published :
- 2012
- REACH SVHC :
- Unknown
- Fall Time (Typ) :
- 29 ns
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Number of Elements :
- 1
- Factory Lead Time :
- 19 Weeks
- FET Type :
- N-Channel
- Width :
- 20.95mm
- Resistance :
- 280mOhm
- Nominal Vgs :
- 4 V
- Vgs (Max) :
- +22V, -6V
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 18V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Operating Temperature :
- 175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V
- Power Dissipation-Max :
- 108W Tc
- Drain to Source Voltage (Vdss) :
- 1200V
- Height :
- 5.03mm
- Gate to Source Voltage (Vgs) :
- 22V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 47 ns
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 1.4mA
- Rise Time :
- 19ns
- RoHS Status :
- ROHS3 Compliant
- Length :
- 15.9mm
- Rds On (Max) @ Id, Vgs :
- 364m Ω @ 4A, 18V
- Turn On Delay Time :
- 19 ns
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Datasheets
- SCT2280KEC
N-Channel Tube 364m Ω @ 4A, 18V +22V, -6V 667pF @ 800V 36nC @ 18V 1200V TO-247-3
SCT2280KEC Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 667pF @ 800V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1.2kV. And this device has 1.2kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 47 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 19 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 22V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Operating this transistor requires a 1200V drain to source voltage (Vdss).By using drive voltage (18V), this device helps reduce its overall power consumption.
SCT2280KEC Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 47 ns
a threshold voltage of 4V
a 1200V drain to source voltage (Vdss)
SCT2280KEC Applications
There are a lot of ROHM Semiconductor
SCT2280KEC applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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