SCT2080KEC
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- Mfr.Part #
- SCT2080KEC
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 1200V 40A TO247
- Stock
- 1,293
- In Stock ：
- 1,293
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 35A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2080pF @ 800V
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 262W Tc
- Number of Pins :
- 3
- Threshold Voltage :
- 4V
- Turn-Off Delay Time :
- 76 ns
- Height :
- 5.03mm
- Packaging :
- Tube
- REACH SVHC :
- Unknown
- Rise Time :
- 36ns
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 19 Weeks
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Interface :
- On/Off
- Turn On Delay Time :
- 35 ns
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Lead Free :
- Lead Free
- Vgs (Max) :
- +22V, -6V
- Fall Time (Typ) :
- 22 ns
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V
- Package / Case :
- TO-247-3
- Operating Temperature :
- 175°C TJ
- Drain Current-Max (Abs) (ID) :
- 40A
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 4.4mA
- Mounting Type :
- Through Hole
- Max Output Current :
- 2A
- Number of Outputs :
- 1
- Published :
- 2012
- Length :
- 15.9mm
- Output Configuration :
- High Side
- Resistance :
- 117mOhm
- Drain to Source Voltage (Vdss) :
- 1200V
- Gate to Source Voltage (Vgs) :
- 22V
- Nominal Vgs :
- 4 V
- Pulsed Drain Current-Max (IDM) :
- 80A
- Width :
- 20.95mm
- Rds On (Max) @ Id, Vgs :
- 117m Ω @ 10A, 18V
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 106nC @ 18V
- Datasheets
- SCT2080KEC
N-Channel Tube 117m Ω @ 10A, 18V +22V, -6V 2080pF @ 800V 106nC @ 18V 1200V TO-247-3
SCT2080KEC Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2080pF @ 800V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 35A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 40A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 76 ns.Peak drain current is 80A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 22V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 1200V is required between drain and source (Vdss).Using drive voltage (18V), this device contributes to a reduction in overall power consumption.
SCT2080KEC Features
a continuous drain current (ID) of 35A
the turn-off delay time is 76 ns
based on its rated peak drain current 80A.
a threshold voltage of 4V
a 1200V drain to source voltage (Vdss)
SCT2080KEC Applications
There are a lot of ROHM Semiconductor
SCT2080KEC applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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