RTQ035P02TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

-2V

Gate to Source Voltage (Vgs) :

12V

Fall Time (Typ) :

40 ns

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Power Dissipation-Max :

1.25W Ta

Pbfree Code :

yes

Current Rating :

-3.5A

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Factory Lead Time :

10 Weeks

Number of Terminations :

6

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 4.5V

Rise Time :

40ns

Pin Count :

6

Drain-source On Resistance-Max :

0.07Ohm

Number of Elements :

1

Published :

2003

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.5A, 4.5V

Drain to Source Breakdown Voltage :

-20V

Drain to Source Voltage (Vdss) :

20V

Power Dissipation :

1.25W

Radiation Hardening :

No

Turn On Delay Time :

16 ns

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

3.5A

Voltage - Rated DC :

-20V

JESD-609 Code :

e1

Terminal Form :

Gull wing

ECCN Code :

EAR99

Number of Pins :

6

Mount :

Surface Mount

Vgs (Max) :

±12V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Turn-Off Delay Time :

55 ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2V @ 1mA