RTQ030P02TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.25W Ta

Rds On (Max) @ Id, Vgs :

80m Ω @ 3A, 4.5V

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

10

Mount :

Surface Mount

JESD-609 Code :

e1

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.09Ohm

Vgs (Max) :

±12V

Drain to Source Breakdown Voltage :

-20V

Vgs(th) (Max) @ Id :

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Rise Time :

27ns

Nominal Vgs :

-2 V

REACH SVHC :

No SVHC

Fall Time (Typ) :

27 ns

Turn On Delay Time :

15 ns

Pin Count :

6

Number of Terminations :

6

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 10V

Voltage - Rated DC :

-20V

Terminal Position :

Dual

Terminal Form :

Gull wing

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

3A

Continuous Drain Current (ID) :

3A

Element Configuration :

Single

Threshold Voltage :

-2V

Current Rating :

-3A

Pbfree Code :

yes

Power Dissipation :

1.25W

Gate to Source Voltage (Vgs) :

12V

Radiation Hardening :

No

Dual Supply Voltage :

-20V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Number of Elements :

1

Turn-Off Delay Time :

50 ns

ECCN Code :

EAR99

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Published :

2003

Transistor Application :

SWITCHING