RTQ020N03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

8A

Rise Time :

11ns

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

8 ns

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

20 Weeks

Published :

2006

Continuous Drain Current (ID) :

2A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Turn-Off Delay Time :

17 ns

Threshold Voltage :

1.5V

Terminal Position :

Dual

Fall Time (Typ) :

11 ns

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

125m Ω @ 2A, 4.5V

Operating Temperature :

150°C TJ

Pbfree Code :

yes

Current Rating :

2A

Number of Pins :

6

Gate to Source Voltage (Vgs) :

12V

Voltage - Rated DC :

30V

Drain Current-Max (Abs) (ID) :

2A

Lead Free :

Lead Free

Number of Elements :

1

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.194Ohm

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

3.3nC @ 4.5V

JESD-609 Code :

e1

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

10

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

135pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.25W

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Power Dissipation-Max :

1.25W Ta