RTQ045N03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

43mOhm

Current Rating :

4.5A

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

31 ns

Gate to Source Voltage (Vgs) :

12V

Time@Peak Reflow Temperature-Max (s) :

10

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

18A

Terminal Position :

Dual

FET Type :

N-Channel

Transistor Application :

SWITCHING

Factory Lead Time :

20 Weeks

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pin Count :

6

Terminal Form :

Gull wing

Pbfree Code :

yes

Power Dissipation :

1.25W

Rise Time :

31ns

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

4.5A

Radiation Hardening :

No

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

13 ns

Mounting Type :

Surface Mount

Turn-Off Delay Time :

45 ns

JESD-609 Code :

e1

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

10.7nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 10V

Power Dissipation-Max :

1.25W Ta

Lead Free :

Lead Free

Number of Pins :

6

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Voltage - Rated DC :

30V

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

43m Ω @ 4.5A, 4.5V

Package / Case :

SOT-23-6 Thin, TSOT-23-6