RTF016N05TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Fall Time (Typ) :

10 ns

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

DS Breakdown Voltage-Min :

45V

Drain-source On Resistance-Max :

0.28Ohm

Package / Case :

3-SMD, Flat Lead

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Transistor Application :

SWITCHING

Number of Pins :

3

Vgs (Max) :

±12V

Rise Time :

14ns

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

12V

Transistor Element Material :

SILICON

Packaging :

Cut Tape (CT)

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

190m Ω @ 1.6A, 4.5V

Mounting Type :

Surface Mount

Pin Count :

3

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Continuous Drain Current (ID) :

1.6A

Drain to Source Voltage (Vdss) :

45V

Operating Temperature :

150°C TJ

Turn On Delay Time :

8 ns

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

FET Type :

N-Channel

Mount :

Surface Mount

Power Dissipation-Max :

320mW Ta

ECCN Code :

EAR99

Turn-Off Delay Time :

16 ns