RTF015P02TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

7 Weeks

Current :

15A

Number of Elements :

1

Power Dissipation :

800mW

Vgs (Max) :

±12V

Drain to Source Breakdown Voltage :

-20V

Fall Time (Typ) :

12 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Radiation Hardening :

No

Terminal Finish :

TIN COPPER

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

10

Turn On Delay Time :

12 ns

Continuous Drain Current (ID) :

1.5A

Voltage - Rated DC :

-20V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Resistance :

250mOhm

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

ECCN Code :

EAR99

JESD-609 Code :

e2

Element Configuration :

Single

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 4.5V

Package / Case :

3-SMD, Flat Lead

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.5A, 4.5V

Dual Supply Voltage :

20V

Turn-Off Delay Time :

38 ns

Current Rating :

-1.5A

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

2V @ 1mA

Nominal Vgs :

2 V

Voltage :

20V

Power Dissipation-Max :

800mW Ta

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Terminal Position :

Dual

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

12ns

Number of Terminations :

3

Pin Count :

3

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 10V