RTF015N03TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

800mW

Published :

2009

ECCN Code :

EAR99

Fall Time (Typ) :

9 ns

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Drain to Source Breakdown Voltage :

30V

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Element Configuration :

Single

Package / Case :

3-SMD, Flat Lead

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Rise Time :

9ns

Continuous Drain Current (ID) :

1.5A

Lead Free :

Lead Free

Radiation Hardening :

No

Number of Terminations :

3

Number of Elements :

1

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Voltage - Rated DC :

30V

Current Rating :

1.5A

REACH SVHC :

No SVHC

Pin Count :

3

Turn-Off Delay Time :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Operating Temperature :

150°C TJ

Turn On Delay Time :

7 ns

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Factory Lead Time :

9 Weeks

Terminal Finish :

TIN COPPER

Transistor Application :

SWITCHING

JESD-609 Code :

e2

Vgs (Max) :

±12V

Power Dissipation-Max :

320mW Ta

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Resistance :

240mOhm

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.5A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

10

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3