RTF010P02TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

FET Type :

P-Channel

Power Dissipation-Max :

800mW Ta

Terminal Finish :

TIN COPPER

Drain Current-Max (Abs) (ID) :

1A

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Pin Count :

3

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

25 ns

Time@Peak Reflow Temperature-Max (s) :

10

Fall Time (Typ) :

8 ns

Package / Case :

3-SMD, Flat Lead

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Elements :

1

Power Dissipation :

800mW

Number of Terminations :

3

Current Rating :

-1A

Resistance :

390mOhm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Rds On (Max) @ Id, Vgs :

390m Ω @ 1A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Rise Time :

8ns

Operating Temperature :

150°C TJ

JESD-609 Code :

e2

Vgs (Max) :

±12V

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

3

Drain to Source Breakdown Voltage :

-20V

Gate to Source Voltage (Vgs) :

12V

Lead Free :

Lead Free

Published :

2004

Continuous Drain Current (ID) :

1A

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-20V

Turn On Delay Time :

9 ns