RN2906FE,LF(CT

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Mfr.Part #
RN2906FE,LF(CT
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO
Stock
100
In Stock :
100

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Resistor - Emitter Base (R2) :
47k Ω
Factory Lead Time :
12 Weeks
Voltage - Collector Emitter Breakdown (Max) :
50V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Transistor Type :
2 PNP - Pre-Biased (Dual)
Power - Max :
100mW
Packaging :
Tape and Reel (TR)
Frequency - Transition :
200MHz
Mounting Type :
Surface Mount
RoHS Status :
Non-RoHS Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA 5V
Resistor - Base (R1) :
4.7k Ω
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector (Ic) (Max) :
100mA
Current - Collector Cutoff (Max) :
500nA
Package / Case :
SOT-563, SOT-666
Datasheets
RN2906FE,LF(CT
Introducing Transistors - Bipolar (BJT) - Arrays, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN2906FE,LF(CT from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:SOT-563, SOT-666, RN2906FE,LF(CT pinout, RN2906FE,LF(CT datasheet PDF, RN2906FE,LF(CT amp .Beyond Transistors - Bipolar (BJT) - Arrays, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN2906FE,LF(CT ,we also offer PUMD2,125, PUMD2,115, PUMD2,165, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation RN2906FE,LF(CT


RN2906FE,LF(CT datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at

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