RN2902,LF(CT

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Weight :

6.010099mg

Resistor - Base (R1) :

10k Ω

Max Power Dissipation :

200mW

Collector Emitter Voltage (VCEO) :

300mV

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Emitter Base Voltage (VEBO) :

-10V

Continuous Collector Current :

-100mA

Frequency - Transition :

200MHz

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-G6

Current - Collector Cutoff (Max) :

500nA

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Power - Max :

200mW

Number of Elements :

2

Transistor Type :

2 PNP - Pre-Biased (Dual)

hFE Min :

50

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Resistor - Emitter Base (R2) :

10k Ω

Max Breakdown Voltage :

50V

Transition Frequency :

200MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Package / Case :

6-TSSOP, SC-88, SOT-363

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Number of Terminations :

6

Published :

2014

Polarity :

PNP

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Mounting Type :

Surface Mount