RN2902,LF(CT

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

10k Ω

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

500nA

Pbfree Code :

yes

Frequency - Transition :

200MHz

Transition Frequency :

200MHz

Polarity :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Emitter Base Voltage (VEBO) :

-10V

Published :

2014

Transistor Element Material :

SILICON

Max Power Dissipation :

200mW

Terminal Form :

Gull wing

Resistor - Emitter Base (R2) :

10k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Number of Terminations :

6

Transistor Type :

2 PNP - Pre-Biased (Dual)

JESD-30 Code :

R-PDSO-G6

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

300mV

hFE Min :

50

Reach Compliance Code :

Unknown

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Number of Elements :

2

RoHS Status :

RoHS Compliant

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Mount :

Surface Mount

Max Collector Current :

100mA

Continuous Collector Current :

-100mA

Weight :

6.010099mg

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Power - Max :

200mW