RN2902,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Emitter Base (R2) :

10k Ω

Power - Max :

200mW

Transistor Type :

2 PNP - Pre-Biased (Dual)

Resistor - Base (R1) :

10k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Packaging :

Cut Tape (CT)

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max) :

500nA

Transistor Application :

SWITCHING

Published :

2014

JESD-30 Code :

R-PDSO-G6

Transition Frequency :

200MHz

Frequency - Transition :

200MHz

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

100mA

Transistor Element Material :

SILICON

Pbfree Code :

yes

Polarity/Channel Type :

PNP

Operating Temperature (Max) :

150°C

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Number of Terminations :

6

Terminal Form :

Gull wing

Reach Compliance Code :

Unknown

Voltage - Collector Emitter Breakdown (Max) :

50V

Number of Elements :

2

Surface Mount :

yes