RGW00TS65GC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Transistor Application :

POWER CONTROL

Current - Collector Pulsed (Icm) :

200A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Td (on/off) @ 25°C :

52ns/180ns

Gate Charge :

141nC

Operating Temperature :

-40°C~175°C TJ

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 50A

Switching Energy :

1.18mJ (on), 960μJ (off)

Test Condition :

400V, 50A, 10 Ω, 15V

RoHS Status :

ROHS3 Compliant

Input Type :

Standard

Power - Max :

254W

Number of Terminations :

3

Voltage - Collector Emitter Breakdown (Max) :

650V

JESD-30 Code :

R-PSFM-T3

Current - Collector (Ic) (Max) :

96A

Factory Lead Time :

17 Weeks

IGBT Type :

Trench Field Stop

Transistor Element Material :

SILICON

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

72 ns

Terminal Position :

Single

Number of Elements :

1

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

273 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-247-3

Configuration :

Single