RGW00TK65DGVC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Power - Max :

89W

Factory Lead Time :

17 Weeks

Turn Off Time-Nom (toff) :

273 ns

Switching Energy :

1.18mJ (on), 960μJ (off)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Test Condition :

400V, 50A, 10 Ω, 15V

Number of Elements :

1

Gate Charge :

141nC

Voltage - Collector Emitter Breakdown (Max) :

650V

Current - Collector (Ic) (Max) :

45A

Terminal Position :

Single

Number of Terminations :

3

Current - Collector Pulsed (Icm) :

200A

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-40°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

Isolated

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 50A

Surface Mount :

No

Mounting Type :

Through Hole

Input Type :

Standard

Turn On Time :

72 ns

Transistor Application :

POWER CONTROL

Package / Case :

TO-3PFM, SC-93-3

Reverse Recovery Time :

95ns

IGBT Type :

Trench Field Stop

JESD-30 Code :

R-PSFM-T3

Td (on/off) @ 25°C :

52ns/180ns

RoHS Status :

ROHS3 Compliant