RGT16TM65DGC9

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Voltage - Collector Emitter Breakdown (Max) :

650V

Reverse Recovery Time :

42ns

JEDEC-95 Code :

TO-220AB

Current - Collector Pulsed (Icm) :

24A

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Test Condition :

400V, 8A, 10 Ω, 15V

IGBT Type :

Trench Field Stop

Number of Elements :

1

Current - Collector (Ic) (Max) :

9A

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Td (on/off) @ 25°C :

13ns/33ns

Turn Off Time-Nom (toff) :

170 ns

Operating Temperature :

-40°C~175°C TJ

Transistor Application :

POWER CONTROL

Input Type :

Standard

Gate Charge :

21nC

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 8A

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3 Full Pack

Polarity/Channel Type :

N-Channel

Factory Lead Time :

17 Weeks

Turn On Time :

27 ns

Case Connection :

Isolated

Power - Max :

22W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)