RFD3N08LSM9A

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3A (Tc)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.5 nC @ 10 V

Operating Temperature :

-55°C ~ 175°C (TJ)

Series :

-

Power Dissipation (Max) :

30W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

5V

Rds On (Max) @ Id, Vgs :

800mOhm @ 3A, 5V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

125 pF @ 25 V

Vgs (Max) :

±10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package :

TO-252-3 (DPAK)

Package :

Bulk

Drain to Source Voltage (Vdss) :

80 V

Product Status :

Active