RFD3055LESM
- Mfr.Part #
- RFD3055LESM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 11A TO252AA
- Stock
- 17,150
- In Stock :
- 17,150
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Fall Time (Typ) :
- 39 ns
- Voltage - Rated DC :
- 60V
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JEDEC-95 Code :
- TO-252AA
- Height :
- 2.39mm
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Resistance :
- 107mOhm
- Length :
- 6.73mm
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 11A
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 22 ns
- Vgs (Max) :
- ±16V
- ECCN Code :
- EAR99
- Current Rating :
- 11A
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Width :
- 6.22mm
- Weight :
- 260.37mg
- Threshold Voltage :
- 3V
- Gate to Source Voltage (Vgs) :
- 16V
- Nominal Vgs :
- 3 V
- Gate Charge (Qg) (Max) @ Vgs :
- 11.3nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Mounting Type :
- Surface Mount
- Published :
- 2002
- Rds On (Max) @ Id, Vgs :
- 107m Ω @ 8A, 5V
- Turn On Delay Time :
- 8 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-30 Code :
- R-PSSO-G2
- Contact Plating :
- Tin
- Power Dissipation :
- 38W
- Power Dissipation-Max :
- 38W Tc
- Rise Time :
- 105ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- RFD3055LESM

N-Channel Tape & Reel (TR) 107m Ω @ 8A, 5V ±16V 350pF @ 25V 11.3nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
RFD3055LESM9A Description
RFD3055LESM9A is a 60v N-Channel Logic Level Power MOSFET. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFD3055LESM9A is designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The transistor RFD3055LESM9A can be operated directly from integrated circuits.
RFD3055LESM9A Features
-
11A, 60V
-
rDS(ON)= 0.107Ω
-
Temperature Compensating PSPICE? Model
-
Peak Current vs Pulse Width Curve
-
UIS Rating Curve
RFD3055LESM9A Applications
-
AC-DC Merchant Power Supply - Servers & Workstations
-
Workstation
-
Server & Mainframe
-
Switching regulators
-
Switching converters
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