RFD3055LESM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

60V

Height :

2.39mm

Radiation Hardening :

No

Length :

6.73mm

Width :

6.22mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

11A

Number of Terminations :

2

Nominal Vgs :

3 V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

8 ns

Power Dissipation-Max :

38W Tc

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

ECCN Code :

EAR99

Lead Free :

Lead Free

Power Dissipation :

38W

Resistance :

107mOhm

Current Rating :

11A

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Threshold Voltage :

3V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

16V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Number of Elements :

1

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

107m Ω @ 8A, 5V

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

REACH SVHC :

No SVHC

FET Type :

N-Channel

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Turn-Off Delay Time :

22 ns

JEDEC-95 Code :

TO-252AA

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±16V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Weight :

260.37mg

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

60V

Published :

2002

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

39 ns

Rise Time :

105ns