RFD3055LESM
- Mfr.Part #
- RFD3055LESM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 11A TO252AA
- Stock
- 17,150
- In Stock :
- 17,150
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 6.73mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Turn-Off Delay Time :
- 22 ns
- Drain to Source Breakdown Voltage :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2002
- Rds On (Max) @ Id, Vgs :
- 107m Ω @ 8A, 5V
- Power Dissipation :
- 38W
- Fall Time (Typ) :
- 39 ns
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 8 ns
- Gate to Source Voltage (Vgs) :
- 16V
- Nominal Vgs :
- 3 V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 11A
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 38W Tc
- JEDEC-95 Code :
- TO-252AA
- Voltage - Rated DC :
- 60V
- REACH SVHC :
- No SVHC
- Weight :
- 260.37mg
- Mount :
- Surface Mount
- Threshold Voltage :
- 3V
- Width :
- 6.22mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Contact Plating :
- Tin
- Current Rating :
- 11A
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 105ns
- Pbfree Code :
- yes
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±16V
- Number of Elements :
- 1
- Resistance :
- 107mOhm
- Height :
- 2.39mm
- Gate Charge (Qg) (Max) @ Vgs :
- 11.3nC @ 10V
- Datasheets
- RFD3055LESM

N-Channel Tape & Reel (TR) 107m Ω @ 8A, 5V ±16V 350pF @ 25V 11.3nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
RFD3055LESM9A Description
RFD3055LESM9A is a 60v N-Channel Logic Level Power MOSFET. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFD3055LESM9A is designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The transistor RFD3055LESM9A can be operated directly from integrated circuits.
RFD3055LESM9A Features
-
11A, 60V
-
rDS(ON)= 0.107Ω
-
Temperature Compensating PSPICE? Model
-
Peak Current vs Pulse Width Curve
-
UIS Rating Curve
RFD3055LESM9A Applications
-
AC-DC Merchant Power Supply - Servers & Workstations
-
Workstation
-
Server & Mainframe
-
Switching regulators
-
Switching converters
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