RFD3055LESM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.73mm

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Turn-Off Delay Time :

22 ns

Drain to Source Breakdown Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Published :

2002

Rds On (Max) @ Id, Vgs :

107m Ω @ 8A, 5V

Power Dissipation :

38W

Fall Time (Typ) :

39 ns

Lead Free :

Lead Free

Turn On Delay Time :

8 ns

Gate to Source Voltage (Vgs) :

16V

Nominal Vgs :

3 V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Case Connection :

DRAIN

Element Configuration :

Single

Radiation Hardening :

No

JESD-609 Code :

e3

Continuous Drain Current (ID) :

11A

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

38W Tc

JEDEC-95 Code :

TO-252AA

Voltage - Rated DC :

60V

REACH SVHC :

No SVHC

Weight :

260.37mg

Mount :

Surface Mount

Threshold Voltage :

3V

Width :

6.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Contact Plating :

Tin

Current Rating :

11A

Operating Temperature :

-55°C~175°C TJ

Rise Time :

105ns

Pbfree Code :

yes

Number of Pins :

3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Vgs (Max) :

±16V

Number of Elements :

1

Resistance :

107mOhm

Height :

2.39mm

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V