RFD3055LESM
- Mfr.Part #
- RFD3055LESM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 11A TO252AA
- Stock
- 17,150
- In Stock :
- 17,150
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 260.37mg
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-252AA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current Rating :
- 11A
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 107mOhm
- Drain to Source Breakdown Voltage :
- 60V
- Nominal Vgs :
- 3 V
- Element Configuration :
- Single
- Threshold Voltage :
- 3V
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Gate to Source Voltage (Vgs) :
- 16V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 11A
- Case Connection :
- DRAIN
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Voltage - Rated DC :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 11.3nC @ 10V
- Rise Time :
- 105ns
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Length :
- 6.73mm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Turn On Delay Time :
- 8 ns
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 107m Ω @ 8A, 5V
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Published :
- 2002
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Vgs (Max) :
- ±16V
- Pbfree Code :
- yes
- Power Dissipation :
- 38W
- Fall Time (Typ) :
- 39 ns
- ECCN Code :
- EAR99
- Height :
- 2.39mm
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 22 ns
- Power Dissipation-Max :
- 38W Tc
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 6.22mm
- Datasheets
- RFD3055LESM

N-Channel Tape & Reel (TR) 107m Ω @ 8A, 5V ±16V 350pF @ 25V 11.3nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
RFD3055LESM9A Description
RFD3055LESM9A is a 60v N-Channel Logic Level Power MOSFET. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFD3055LESM9A is designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The transistor RFD3055LESM9A can be operated directly from integrated circuits.
RFD3055LESM9A Features
-
11A, 60V
-
rDS(ON)= 0.107Ω
-
Temperature Compensating PSPICE? Model
-
Peak Current vs Pulse Width Curve
-
UIS Rating Curve
RFD3055LESM9A Applications
-
AC-DC Merchant Power Supply - Servers & Workstations
-
Workstation
-
Server & Mainframe
-
Switching regulators
-
Switching converters
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