RFD3055LESM
- Mfr.Part #
- RFD3055LESM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 11A TO252AA
- Stock
- 17,150
- In Stock :
- 17,150
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Width :
- 6.22mm
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±16V
- Factory Lead Time :
- 8 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 11.3nC @ 10V
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 16V
- Continuous Drain Current (ID) :
- 11A
- Weight :
- 260.37mg
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Pins :
- 3
- Fall Time (Typ) :
- 39 ns
- Terminal Form :
- Gull wing
- Published :
- 2002
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 60V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Current Rating :
- 11A
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Threshold Voltage :
- 3V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 6.73mm
- Rds On (Max) @ Id, Vgs :
- 107m Ω @ 8A, 5V
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 22 ns
- Power Dissipation :
- 38W
- Height :
- 2.39mm
- Nominal Vgs :
- 3 V
- Drain to Source Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JEDEC-95 Code :
- TO-252AA
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Resistance :
- 107mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Turn On Delay Time :
- 8 ns
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 38W Tc
- Rise Time :
- 105ns
- Lead Free :
- Lead Free
- Datasheets
- RFD3055LESM

N-Channel Tape & Reel (TR) 107m Ω @ 8A, 5V ±16V 350pF @ 25V 11.3nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
RFD3055LESM9A Description
RFD3055LESM9A is a 60v N-Channel Logic Level Power MOSFET. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFD3055LESM9A is designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The transistor RFD3055LESM9A can be operated directly from integrated circuits.
RFD3055LESM9A Features
-
11A, 60V
-
rDS(ON)= 0.107Ω
-
Temperature Compensating PSPICE? Model
-
Peak Current vs Pulse Width Curve
-
UIS Rating Curve
RFD3055LESM9A Applications
-
AC-DC Merchant Power Supply - Servers & Workstations
-
Workstation
-
Server & Mainframe
-
Switching regulators
-
Switching converters
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