RFD3055

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

53W Tc

Voltage - Rated DC :

60V

Element Configuration :

Single

Published :

2002

JEDEC-95 Code :

TO-252AA

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Power Dissipation :

53W

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Rise Time :

21ns

Current Rating :

12A

Drain Current-Max (Abs) (ID) :

11A

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Lead Free :

Lead Free

Mount :

Through Hole

Drain-source On Resistance-Max :

0.107Ohm

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Terminations :

2

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

12A

Turn-Off Delay Time :

16 ns

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 20V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

HTS Code :

8541.29.00.95

Rds On (Max) @ Id, Vgs :

150m Ω @ 12A, 10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

10 ns