RFD3055LESM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Height :

2.39mm

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

Resistance :

107mOhm

Factory Lead Time :

8 Weeks

Length :

6.73mm

Radiation Hardening :

No

Width :

6.22mm

Contact Plating :

Tin

Current Rating :

11A

Voltage - Rated DC :

60V

Fall Time (Typ) :

39 ns

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Published :

2002

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

RoHS Status :

ROHS3 Compliant

Power Dissipation :

38W

Rise Time :

105ns

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

16V

Continuous Drain Current (ID) :

11A

JESD-609 Code :

e3

Turn On Delay Time :

8 ns

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Power Dissipation-Max :

38W Tc

Operating Mode :

ENHANCEMENT MODE

Weight :

260.37mg

Turn-Off Delay Time :

22 ns

Drain to Source Breakdown Voltage :

60V

Nominal Vgs :

3 V

Number of Elements :

1

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

3V

Rds On (Max) @ Id, Vgs :

107m Ω @ 8A, 5V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V

Number of Pins :

3

Element Configuration :

Single

JEDEC-95 Code :

TO-252AA

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Vgs (Max) :

±16V