RFD3055LESM9A
- Mfr.Part #
- RFD3055LESM9A
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 11A TO252AA
- Stock
- 31,483
- In Stock :
- 31,483
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 11A
- Resistance :
- 107mOhm
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 22 ns
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 16V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Contact Plating :
- Tin
- Number of Terminations :
- 2
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-252AA
- Vgs (Max) :
- ±16V
- Length :
- 6.73mm
- Mount :
- Surface Mount
- Turn On Delay Time :
- 8 ns
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Published :
- 2002
- Rds On (Max) @ Id, Vgs :
- 107m Ω @ 8A, 5V
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Weight :
- 260.37mg
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 39 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 8 Weeks
- Drain to Source Breakdown Voltage :
- 60V
- Power Dissipation :
- 38W
- Gate Charge (Qg) (Max) @ Vgs :
- 11.3nC @ 10V
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 38W Tc
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Voltage - Rated DC :
- 60V
- Rise Time :
- 105ns
- Current Rating :
- 11A
- Height :
- 2.39mm
- Threshold Voltage :
- 3V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Width :
- 6.22mm
- Nominal Vgs :
- 3 V
- Pbfree Code :
- yes
- Datasheets
- RFD3055LESM9A

N-Channel Tape & Reel (TR) 107m Ω @ 8A, 5V ±16V 350pF @ 25V 11.3nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
RFD3055LESM9A Description
RFD3055LESM9A is a 60v N-Channel Logic Level Power MOSFET. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFD3055LESM9A is designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The transistor RFD3055LESM9A can be operated directly from integrated circuits.
RFD3055LESM9A Features
-
11A, 60V
-
rDS(ON)= 0.107Ω
-
Temperature Compensating PSPICE? Model
-
Peak Current vs Pulse Width Curve
-
UIS Rating Curve
RFD3055LESM9A Applications
-
AC-DC Merchant Power Supply - Servers & Workstations
-
Workstation
-
Server & Mainframe
-
Switching regulators
-
Switching converters
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