RFD3055LESM9A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Continuous Drain Current (ID) :

11A

Resistance :

107mOhm

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Turn-Off Delay Time :

22 ns

JESD-609 Code :

e3

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

16V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Contact Plating :

Tin

Number of Terminations :

2

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±16V

Length :

6.73mm

Mount :

Surface Mount

Turn On Delay Time :

8 ns

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Published :

2002

Rds On (Max) @ Id, Vgs :

107m Ω @ 8A, 5V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Weight :

260.37mg

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

39 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

38W

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Power Dissipation-Max :

38W Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Voltage - Rated DC :

60V

Rise Time :

105ns

Current Rating :

11A

Height :

2.39mm

Threshold Voltage :

3V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

5V

FET Type :

N-Channel

Case Connection :

DRAIN

Width :

6.22mm

Nominal Vgs :

3 V

Pbfree Code :

yes