RFD3055LE

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Mfr.Part #
RFD3055LE
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 60V 11A IPAK
Stock
3,307
In Stock :
3,307

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
ECCN Code :
EAR99
Voltage - Rated DC :
60V
Transistor Element Material :
SILICON
Mount :
Through Hole
Published :
2002
Turn On Delay Time :
8 ns
Nominal Vgs :
3 V
Radiation Hardening :
No
Turn-Off Delay Time :
22 ns
Continuous Drain Current (ID) :
11A
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Recovery Time :
66 ns
Power Dissipation-Max :
38W Tc
REACH SVHC :
No SVHC
Length :
6.8mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Lead Free :
Lead Free
Operating Temperature :
-55°C~175°C TJ
Contact Plating :
Tin
Power Dissipation :
38W
Threshold Voltage :
3V
Factory Lead Time :
8 Weeks
Number of Terminations :
3
Fall Time (Typ) :
39 ns
Rds On (Max) @ Id, Vgs :
107m Ω @ 8A, 5V
Rise Time :
105ns
Current Rating :
11A
Element Configuration :
Single
Width :
2.5mm
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
16V
Height :
6.3mm
Vgs(th) (Max) @ Id :
3V @ 250µA
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
5V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Packaging :
Tube
Case Connection :
DRAIN
Weight :
343.08mg
Pbfree Code :
yes
Vgs (Max) :
±16V
Resistance :
107mOhm
Drain to Source Breakdown Voltage :
60V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Datasheets
RFD3055LE
Introducing Transistors - FETs, MOSFETs - Single onsemi RFD3055LE from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, RFD3055LE pinout, RFD3055LE datasheet PDF, RFD3055LE amp .Beyond Transistors - FETs, MOSFETs - Single onsemi RFD3055LE ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi RFD3055LE


N-Channel Tube 107m Ω @ 8A, 5V ±16V 350pF @ 25V 11.3nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

RFD3055LE Description


RFD3055LE MOSFETs are manufactured with the most up-to-date manufacturing technology. This method, which uses feature sizes that are similar to those found in LSI circuits, allows for the most efficient use of silicon, resulting in exceptional performance. They were designed for use in switching regulators, switching converters, motor drivers, and relay drivers, among other applications. These transistors can be directly controlled from integrated circuits.



RFD3055LE Features


?Temperature Compensating Model PSPICE?


?Peak Curve vs. Pulse Width Curve (Peak Curve vs. Pulse Width Curve)


?UIS Curve of Ratio


?Related Readings


"Guidelines for Soldering Surface Mount Components to PC Boards" -TB334



RFD3055LE Applications


RFD3055LE is intended for general use and can be used in a variety of situations.


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