RFD3055LE

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Mfr.Part #
RFD3055LE
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 60V 11A IPAK
Stock
3,307
In Stock :
3,307

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Threshold Voltage :
3V
Current - Continuous Drain (Id) @ 25°C :
11A Tc
ECCN Code :
EAR99
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~175°C TJ
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
16V
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Number of Elements :
1
Power Dissipation-Max :
38W Tc
Resistance :
107mOhm
Turn On Delay Time :
8 ns
Number of Terminations :
3
Recovery Time :
66 ns
Current Rating :
11A
Weight :
343.08mg
Rise Time :
105ns
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
3V @ 250µA
Continuous Drain Current (ID) :
11A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Case Connection :
DRAIN
FET Type :
N-Channel
Fall Time (Typ) :
39 ns
Vgs (Max) :
±16V
Width :
2.5mm
Factory Lead Time :
8 Weeks
Number of Pins :
3
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Voltage - Rated DC :
60V
Contact Plating :
Tin
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Element Configuration :
Single
Published :
2002
Length :
6.8mm
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
107m Ω @ 8A, 5V
Transistor Application :
SWITCHING
Pbfree Code :
yes
Power Dissipation :
38W
Mount :
Through Hole
Nominal Vgs :
3 V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Drain to Source Breakdown Voltage :
60V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Turn-Off Delay Time :
22 ns
Height :
6.3mm
Drive Voltage (Max Rds On,Min Rds On) :
5V
Datasheets
RFD3055LE
Introducing Transistors - FETs, MOSFETs - Single onsemi RFD3055LE from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, RFD3055LE pinout, RFD3055LE datasheet PDF, RFD3055LE amp .Beyond Transistors - FETs, MOSFETs - Single onsemi RFD3055LE ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi RFD3055LE


N-Channel Tube 107m Ω @ 8A, 5V ±16V 350pF @ 25V 11.3nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

RFD3055LE Description


RFD3055LE MOSFETs are manufactured with the most up-to-date manufacturing technology. This method, which uses feature sizes that are similar to those found in LSI circuits, allows for the most efficient use of silicon, resulting in exceptional performance. They were designed for use in switching regulators, switching converters, motor drivers, and relay drivers, among other applications. These transistors can be directly controlled from integrated circuits.



RFD3055LE Features


?Temperature Compensating Model PSPICE?


?Peak Curve vs. Pulse Width Curve (Peak Curve vs. Pulse Width Curve)


?UIS Curve of Ratio


?Related Readings


"Guidelines for Soldering Surface Mount Components to PC Boards" -TB334



RFD3055LE Applications


RFD3055LE is intended for general use and can be used in a variety of situations.


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