RFD3055LE

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

39 ns

Continuous Drain Current (ID) :

11A

Current Rating :

11A

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Resistance :

107mOhm

Turn-Off Delay Time :

22 ns

Pbfree Code :

yes

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Recovery Time :

66 ns

Gate to Source Voltage (Vgs) :

16V

Vgs(th) (Max) @ Id :

3V @ 250µA

Published :

2002

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drive Voltage (Max Rds On,Min Rds On) :

5V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

107m Ω @ 8A, 5V

JESD-609 Code :

e3

Packaging :

Tube

Mount :

Through Hole

Vgs (Max) :

±16V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Rise Time :

105ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

REACH SVHC :

No SVHC

Nominal Vgs :

3 V

Factory Lead Time :

8 Weeks

Height :

6.3mm

Number of Pins :

3

Element Configuration :

Single

Width :

2.5mm

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Threshold Voltage :

3V

FET Type :

N-Channel

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Weight :

343.08mg

Power Dissipation-Max :

38W Tc

Voltage - Rated DC :

60V

Turn On Delay Time :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

Power Dissipation :

38W

Transistor Application :

SWITCHING

Length :

6.8mm

Number of Elements :

1

Lead Free :

Lead Free

Number of Terminations :

3

Contact Plating :

Tin

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant