RFD3055LE

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Mfr.Part #
RFD3055LE
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 60V 11A IPAK
Stock
3,307
In Stock :
3,307

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Length :
6.8mm
Contact Plating :
Tin
Continuous Drain Current (ID) :
11A
Vgs(th) (Max) @ Id :
3V @ 250µA
Packaging :
Tube
Number of Pins :
3
Power Dissipation :
38W
FET Type :
N-Channel
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Weight :
343.08mg
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature :
-55°C~175°C TJ
Threshold Voltage :
3V
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
105ns
Lead Free :
Lead Free
Width :
2.5mm
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
5V
Nominal Vgs :
3 V
Case Connection :
DRAIN
Turn-Off Delay Time :
22 ns
Factory Lead Time :
8 Weeks
Recovery Time :
66 ns
REACH SVHC :
No SVHC
Height :
6.3mm
Fall Time (Typ) :
39 ns
Current Rating :
11A
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Number of Terminations :
3
Voltage - Rated DC :
60V
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Published :
2002
Rds On (Max) @ Id, Vgs :
107m Ω @ 8A, 5V
Resistance :
107mOhm
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
11A Tc
ECCN Code :
EAR99
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
60V
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Mounting Type :
Through Hole
Radiation Hardening :
No
Turn On Delay Time :
8 ns
Pbfree Code :
yes
Power Dissipation-Max :
38W Tc
Gate to Source Voltage (Vgs) :
16V
Datasheets
RFD3055LE
Introducing Transistors - FETs, MOSFETs - Single onsemi RFD3055LE from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, RFD3055LE pinout, RFD3055LE datasheet PDF, RFD3055LE amp .Beyond Transistors - FETs, MOSFETs - Single onsemi RFD3055LE ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi RFD3055LE


N-Channel Tube 107m Ω @ 8A, 5V ±16V 350pF @ 25V 11.3nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

RFD3055LE Description


RFD3055LE MOSFETs are manufactured with the most up-to-date manufacturing technology. This method, which uses feature sizes that are similar to those found in LSI circuits, allows for the most efficient use of silicon, resulting in exceptional performance. They were designed for use in switching regulators, switching converters, motor drivers, and relay drivers, among other applications. These transistors can be directly controlled from integrated circuits.



RFD3055LE Features


?Temperature Compensating Model PSPICE?


?Peak Curve vs. Pulse Width Curve (Peak Curve vs. Pulse Width Curve)


?UIS Curve of Ratio


?Related Readings


"Guidelines for Soldering Surface Mount Components to PC Boards" -TB334



RFD3055LE Applications


RFD3055LE is intended for general use and can be used in a variety of situations.


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