RFD3055LE

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Mfr.Part #
RFD3055LE
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 60V 11A IPAK
Stock
3,307
In Stock :
3,307

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Factory Lead Time :
8 Weeks
Voltage - Rated DC :
60V
Transistor Application :
SWITCHING
Weight :
343.08mg
Gate to Source Voltage (Vgs) :
16V
Turn-Off Delay Time :
22 ns
Drain to Source Breakdown Voltage :
60V
Width :
2.5mm
FET Type :
N-Channel
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
5V
Nominal Vgs :
3 V
Element Configuration :
Single
Turn On Delay Time :
8 ns
Pbfree Code :
yes
Published :
2002
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Power Dissipation :
38W
Recovery Time :
66 ns
Rise Time :
105ns
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
107m Ω @ 8A, 5V
Resistance :
107mOhm
REACH SVHC :
No SVHC
Current Rating :
11A
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
3V @ 250µA
Fall Time (Typ) :
39 ns
Threshold Voltage :
3V
Number of Terminations :
3
Height :
6.3mm
Contact Plating :
Tin
Continuous Drain Current (ID) :
11A
Lead Free :
Lead Free
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Power Dissipation-Max :
38W Tc
Number of Pins :
3
Vgs (Max) :
±16V
Number of Elements :
1
Mount :
Through Hole
Length :
6.8mm
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Radiation Hardening :
No
Operating Temperature :
-55°C~175°C TJ
Case Connection :
DRAIN
Datasheets
RFD3055LE
Introducing Transistors - FETs, MOSFETs - Single onsemi RFD3055LE from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:-55°C~175°C TJ, RFD3055LE pinout, RFD3055LE datasheet PDF, RFD3055LE amp .Beyond Transistors - FETs, MOSFETs - Single onsemi RFD3055LE ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi RFD3055LE


N-Channel Tube 107m Ω @ 8A, 5V ±16V 350pF @ 25V 11.3nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

RFD3055LE Description


RFD3055LE MOSFETs are manufactured with the most up-to-date manufacturing technology. This method, which uses feature sizes that are similar to those found in LSI circuits, allows for the most efficient use of silicon, resulting in exceptional performance. They were designed for use in switching regulators, switching converters, motor drivers, and relay drivers, among other applications. These transistors can be directly controlled from integrated circuits.



RFD3055LE Features


?Temperature Compensating Model PSPICE?


?Peak Curve vs. Pulse Width Curve (Peak Curve vs. Pulse Width Curve)


?UIS Curve of Ratio


?Related Readings


"Guidelines for Soldering Surface Mount Components to PC Boards" -TB334



RFD3055LE Applications


RFD3055LE is intended for general use and can be used in a variety of situations.


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