RFD3055LE

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

107m Ω @ 8A, 5V

Contact Plating :

Tin

Fall Time (Typ) :

39 ns

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

60V

Voltage - Rated DC :

60V

RoHS Status :

ROHS3 Compliant

Height :

6.3mm

Power Dissipation :

38W

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

16V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

ECCN Code :

EAR99

Length :

6.8mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

Resistance :

107mOhm

Number of Terminations :

3

Width :

2.5mm

Transistor Application :

SWITCHING

Nominal Vgs :

3 V

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Rise Time :

105ns

Power Dissipation-Max :

38W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Pbfree Code :

yes

Threshold Voltage :

3V

Continuous Drain Current (ID) :

11A

Element Configuration :

Single

Packaging :

Tube

Number of Pins :

3

Published :

2002

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No

Current Rating :

11A

Vgs (Max) :

±16V

Case Connection :

DRAIN

Lead Free :

Lead Free

Turn-Off Delay Time :

22 ns

JESD-609 Code :

e3

Weight :

343.08mg

Turn On Delay Time :

8 ns

REACH SVHC :

No SVHC

Number of Elements :

1

Recovery Time :

66 ns