RFD3055LE

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Mfr.Part #
RFD3055LE
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 60V 11A IPAK
Stock
3,307
In Stock :
3,307

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Mount :
Through Hole
Length :
6.8mm
Factory Lead Time :
8 Weeks
Number of Terminations :
3
Voltage - Rated DC :
60V
Pbfree Code :
yes
Power Dissipation-Max :
38W Tc
Current Rating :
11A
Transistor Element Material :
SILICON
Height :
6.3mm
Gate to Source Voltage (Vgs) :
16V
Number of Elements :
1
Turn-Off Delay Time :
22 ns
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Fall Time (Typ) :
39 ns
Continuous Drain Current (ID) :
11A
Nominal Vgs :
3 V
Packaging :
Tube
Operating Temperature :
-55°C~175°C TJ
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Rds On (Max) @ Id, Vgs :
107m Ω @ 8A, 5V
Drain to Source Breakdown Voltage :
60V
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
3V @ 250µA
Power Dissipation :
38W
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Weight :
343.08mg
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
5V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins :
3
Resistance :
107mOhm
Case Connection :
DRAIN
Vgs (Max) :
±16V
Width :
2.5mm
Rise Time :
105ns
Lead Free :
Lead Free
Contact Plating :
Tin
Operating Mode :
ENHANCEMENT MODE
Published :
2002
Threshold Voltage :
3V
Turn On Delay Time :
8 ns
FET Type :
N-Channel
Recovery Time :
66 ns
Current - Continuous Drain (Id) @ 25°C :
11A Tc
REACH SVHC :
No SVHC
Mounting Type :
Through Hole
Datasheets
RFD3055LE
Introducing Transistors - FETs, MOSFETs - Single onsemi RFD3055LE from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, Mounting Type:Through Hole, RFD3055LE pinout, RFD3055LE datasheet PDF, RFD3055LE amp .Beyond Transistors - FETs, MOSFETs - Single onsemi RFD3055LE ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi RFD3055LE


N-Channel Tube 107m Ω @ 8A, 5V ±16V 350pF @ 25V 11.3nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

RFD3055LE Description


RFD3055LE MOSFETs are manufactured with the most up-to-date manufacturing technology. This method, which uses feature sizes that are similar to those found in LSI circuits, allows for the most efficient use of silicon, resulting in exceptional performance. They were designed for use in switching regulators, switching converters, motor drivers, and relay drivers, among other applications. These transistors can be directly controlled from integrated circuits.



RFD3055LE Features


?Temperature Compensating Model PSPICE?


?Peak Curve vs. Pulse Width Curve (Peak Curve vs. Pulse Width Curve)


?UIS Curve of Ratio


?Related Readings


"Guidelines for Soldering Surface Mount Components to PC Boards" -TB334



RFD3055LE Applications


RFD3055LE is intended for general use and can be used in a variety of situations.


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