RD3L150SNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.051Ohm

Pulsed Drain Current-Max (IDM) :

30A

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 1mA

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Number of Terminations :

2

Vgs (Max) :

±20V

Power Dissipation-Max :

20W Tc

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount :

yes

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

60V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 10V

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

15A

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

40m Ω @ 15A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED