RD3L01BATTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Details

Number of Elements per Chip :

1

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Minimum Operating Temperature :

- 55 C

Continuous Drain Current Id :

10

Rise Time :

22 ns

Transistor Polarity :

P-Channel

Supplier Device Package :

TO-252

Package / Case :

TO-252-3

Packaging :

Cut Tape

Technology :

Si

Gate Charge (Qg) (Max) @ Vgs :

15.2 nC @ 10 V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)

FET Type :

P-Channel

Product Status :

Active

Drain to Source Voltage (Vdss) :

60 V

Number of Channels :

1 Channel

Vgs (Max) :

±20V

FET Feature :

-

Channel Mode :

Enhancement

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Product Category :

MOSFET

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Product Type :

MOSFET

Power Dissipation :

26

Subcategory :

MOSFETs

Rds On (Max) @ Id, Vgs :

84mOhm @ 10A, 10V

Mounting Style :

SMD/SMT

Series :

-

Manufacturer :

Rohm Semiconductor

Power Dissipation (Max) :

26W (Ta)

Channel Type :

P

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Qualification :

-

Brand :

Rohm Semiconductor

Maximum Operating Temperature :

+ 150 C

Package Type :

DPAK (TO-252)

Input Capacitance (Ciss) (Max) @ Vds :

1200 pF @ 30 V

Transistor Type :

1 P - Channel

Configuration :

Single