RD3L08BGNTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0055Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

3620pF @ 30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 80A, 10V

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Number of Terminations :

2

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

80A

Packaging :

Cut Tape (CT)

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

60 mJ

Pulsed Drain Current-Max (IDM) :

160A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Vgs (Max) :

±20V

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

60V

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Power Dissipation-Max :

119W Tc

Terminal Position :

Single