RD3L080SNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

60V

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.109Ohm

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Case Connection :

DRAIN

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

8A

Rds On (Max) @ Id, Vgs :

80m Ω @ 8A, 10V

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

15W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

16A

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Factory Lead Time :

16 Weeks