RD3L03BATTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current Id :

35A

Supplier Device Package :

TO-252

Drain to Source Voltage (Vdss) :

60 V

Power Dissipation (Max) :

56W (Ta)

Product Category :

MOSFET

Package Type :

DPAK (TO-252)

Package / Case :

TO-252-3

Product Status :

Obsolete

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Packaging :

Cut Tape

Manufacturer :

Rohm Semiconductor

Subcategory :

MOSFETs

Rds On (Max) @ Id, Vgs :

41mOhm @ 35A, 10V

Transistor Type :

1 P - Channel

Technology :

Si

Transistor Polarity :

P-Channel

Mounting Style :

SMD/SMT

RoHS :

Details

Input Capacitance (Ciss) (Max) @ Vds :

1930 pF @ 30 V

Series :

-

Number of Elements per Chip :

1

Minimum Operating Temperature :

- 55 C

Qualification :

-

FET Type :

P-Channel

Operating Temperature :

150°C (TJ)

Configuration :

Single

FET Feature :

-

Maximum Operating Temperature :

+ 150 C

Channel Mode :

Enhancement

Channel Type :

P

Product Type :

MOSFET

Power Dissipation :

56W

Rise Time :

61 ns

Mounting Type :

Surface Mount

Number of Channels :

1 Channel

Brand :

Rohm Semiconductor

Package :

Bulk

Base Product Number :

X.FL-LP

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

35A (Ta)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Gate Charge (Qg) (Max) @ Vgs :

37 nC @ 10 V