RD3L050SNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.14Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

109m Ω @ 5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 10V

FET Type :

N-Channel

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

5A Ta

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Operating Temperature :

150°C TJ

Power Dissipation-Max :

15W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

5A

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount :

yes

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

15A

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V