RD3G400GNTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

26W Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 40A, 10V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

40A Ta

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

80A

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mounting Type :

Surface Mount

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

40A

Avalanche Energy Rating (Eas) :

3.1 mJ

Number of Terminations :

2

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

40V

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

1410pF @ 20V

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Drain-source On Resistance-Max :

0.0095Ohm

Surface Mount :

yes