RD3G07BATTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements per Chip :

1

Qualification :

-

Vgs (Max) :

±20V

Transistor Polarity :

P-Channel

Transistor Type :

1 P - Channel

Package Type :

DPAK (TO-252)

Configuration :

Single

Power Dissipation (Max) :

101W (Ta)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Number of Channels :

1 Channel

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Continuous Drain Current Id :

70

Package :

Digi-Reel?

Packaging :

Cut Tape

Manufacturer :

Rohm Semiconductor

Gate Charge (Qg) (Max) @ Vgs :

105 nC @ 10 V

FET Type :

P-Channel

Brand :

Rohm Semiconductor

Product Category :

MOSFET

Product Type :

MOSFET

Rise Time :

90 ns

Mounting Type :

Surface Mount

RoHS :

Details

FET Feature :

-

Mounting Style :

SMD/SMT

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

70A (Ta)

Operating Temperature :

150°C (TJ)

Power Dissipation :

101

Subcategory :

MOSFETs

Pin Count :

3

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

7.1mOhm @ 70A, 10V

Series :

-

Drain to Source Voltage (Vdss) :

40 V

Supplier Device Package :

TO-252

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

5550 pF @ 20 V

Channel Type :

P

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63