RD3G500GNTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

35W Tc

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 50A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

22800pF @ 20V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

40V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Terminal Position :

Single

Surface Mount :

yes

Factory Lead Time :

16 Weeks

Pulsed Drain Current-Max (IDM) :

100A

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

94 mJ

Drain Current-Max (Abs) (ID) :

50A

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Packaging :

Cut Tape (CT)

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain-source On Resistance-Max :

0.0063Ohm

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

40V

Number of Terminations :

2