RD3G600GNTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 60A, 10V

Pulsed Drain Current-Max (IDM) :

120A

Vgs (Max) :

±20V

Case Connection :

DRAIN

Factory Lead Time :

16 Weeks

Terminal Form :

Gull wing

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

60A

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

40V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Avalanche Energy Rating (Eas) :

13 mJ

Power Dissipation-Max :

40W Ta

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

46.5nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 20V

Number of Elements :

1

Drain-source On Resistance-Max :

0.0043Ohm

Packaging :

Cut Tape (CT)

Number of Terminations :

2

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Terminal Position :

Single

Transistor Element Material :

SILICON