RCX120N25

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

180mOhm

Packaging :

Bulk

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

250V

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

150°C TJ

Power Dissipation-Max :

2.23W Ta 40W Tc

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Turn On Delay Time :

33 ns

Radiation Hardening :

No

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

20 ns

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

48A

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

40W

Pin Count :

3

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Rise Time :

65ns

Avalanche Energy Rating (Eas) :

10.5 mJ

Transistor Element Material :

SILICON

Published :

2013

ECCN Code :

EAR99

Turn-Off Delay Time :

45 ns

Continuous Drain Current (ID) :

12A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Factory Lead Time :

16 Weeks

Mount :

Through Hole

Case Connection :

Isolated

Number of Elements :

1