RCX120N20

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.23W Ta 40W Tc

Operating Temperature :

150°C TJ

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Turn-Off Delay Time :

27 ns

Drain to Source Breakdown Voltage :

200V

Vgs (Max) :

±30V

Fall Time (Typ) :

11 ns

Pulsed Drain Current-Max (IDM) :

48A

Terminal Position :

Single

Mounting Type :

Through Hole

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5.25V @ 1mA

Transistor Element Material :

SILICON

Radiation Hardening :

No

Rise Time :

33ns

Packaging :

Bulk

Mount :

Through Hole

Number of Channels :

1

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

325m Ω @ 6A, 10V

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Published :

2011

Factory Lead Time :

16 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Continuous Drain Current (ID) :

12A

Turn On Delay Time :

20 ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Case Connection :

Isolated