RCX160N20

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Case Connection :

Isolated

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.18ohm

Number of Elements :

1

Operating Temperature :

150°C TJ

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

200V

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

20.7 mJ

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

1370pF @ 25V

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

64A

Power Dissipation-Max :

2.23W Ta 40W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

200V

Rds On (Max) @ Id, Vgs :

180m Ω @ 8A, 10V

Vgs(th) (Max) @ Id :

5.25V @ 1mA

Terminal Position :

Single

ECCN Code :

EAR99

Published :

2011

Factory Lead Time :

16 Weeks

JESD-30 Code :

R-PSFM-T3

Packaging :

Bulk

Continuous Drain Current (ID) :

16A

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED