RCX100N25

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

250V

Mount :

Through Hole

Factory Lead Time :

16 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Terminal Position :

Single

Operating Temperature :

150°C TJ

Power Dissipation :

40W

Power Dissipation-Max :

40W Tc

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Published :

2009

Packaging :

Bulk

FET Type :

N-Channel

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Drain-source On Resistance-Max :

0.32Ohm

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

HTS Code :

8541.29.00.95

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

Isolated

Package / Case :

TO-220-3 Full Pack

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

7.29 mJ

Pulsed Drain Current-Max (IDM) :

40A

Number of Terminations :

3

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

10A