R6515KNZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.315Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1.05nF @ 25V

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

15A

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

315m Ω @ 6.5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

310 mJ

Number of Terminations :

3

Surface Mount :

No

FET Type :

N-Channel

Power Dissipation-Max :

60W Tc

Operating Temperature :

150°C TJ

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

45A

DS Breakdown Voltage-Min :

650V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-3P-3 Full Pack

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

27.5nC @ 10V

Drain to Source Voltage (Vdss) :

650V

Vgs(th) (Max) @ Id :

5V @ 430μA

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)