QS6J3TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

12 ns

Element Configuration :

Dual

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

20V

Turn On Delay Time :

10 ns

Turn-Off Delay Time :

45 ns

Max Power Dissipation :

1.25W

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 1mA

Pin Count :

6

Radiation Hardening :

No

Voltage - Rated DC :

-20V

Lead Free :

Lead Free

Number of Pins :

6

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

10

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Base Part Number :

*J3

Rise Time :

12ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

215m Ω @ 1.5A, 4.5V

Dual Supply Voltage :

-20V

Number of Elements :

2

Number of Terminations :

6

Power Dissipation :

1.25W

Terminal Form :

Gull wing

Threshold Voltage :

-2V

Transistor Element Material :

SILICON

Resistance :

215mOhm

Current Rating :

-1.5A

Nominal Vgs :

-2 V

REACH SVHC :

No SVHC

FET Type :

2 P-Channel (Dual)

Published :

2004

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-20V

Termination :

SMD/SMT

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1.5A

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V