QS6J3TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current Rating :

-1.5A

Element Configuration :

Dual

ECCN Code :

EAR99

JESD-609 Code :

e1

FET Feature :

Logic Level Gate

Threshold Voltage :

-2V

Turn-Off Delay Time :

45 ns

Gate to Source Voltage (Vgs) :

12V

Transistor Application :

SWITCHING

Number of Terminations :

6

Power Dissipation :

1.25W

Nominal Vgs :

-2 V

Published :

2004

Drain to Source Breakdown Voltage :

-20V

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 10V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Turn On Delay Time :

10 ns

Voltage - Rated DC :

-20V

FET Type :

2 P-Channel (Dual)

Termination :

SMD/SMT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Radiation Hardening :

No

Terminal Form :

Gull wing

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

215m Ω @ 1.5A, 4.5V

RoHS Status :

ROHS3 Compliant

Rise Time :

12ns

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Dual Supply Voltage :

-20V

Pin Count :

6

Base Part Number :

*J3

Continuous Drain Current (ID) :

1.5A

Operating Temperature :

150°C TJ

Number of Pins :

6

Resistance :

215mOhm

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Elements :

2

Fall Time (Typ) :

12 ns

Time@Peak Reflow Temperature-Max (s) :

10

Max Power Dissipation :

1.25W