QS6J11TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

65 ns

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

ECCN Code :

EAR99

Pin Count :

6

Mount :

Surface Mount

Turn On Delay Time :

10 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

105m Ω @ 2A, 4.5V

Fall Time (Typ) :

35 ns

Max Power Dissipation :

600mW

Base Part Number :

*J11

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 6V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

10

Drain Current-Max (Abs) (ID) :

2A

Radiation Hardening :

No

Published :

2009

Lead Free :

Lead Free

Factory Lead Time :

20 Weeks

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

8A

JESD-30 Code :

R-PDSO-G8

Number of Channels :

2

Drain to Source Voltage (Vdss) :

12V

Gate to Source Voltage (Vgs) :

10V

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Number of Terminations :

8

Number of Pins :

6

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

JESD-609 Code :

e1

Drain-source On Resistance-Max :

0.105Ohm

Pbfree Code :

yes

FET Type :

2 P-Channel (Dual)

Rise Time :

17ns

Continuous Drain Current (ID) :

2A

Terminal Form :

Gull wing