QS6J1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 10V

Rise Time :

12ns

Number of Elements :

2

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-20V

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Pulsed Drain Current-Max (IDM) :

6A

FET Type :

2 P-Channel (Dual)

Max Power Dissipation :

1.25W

Packaging :

Tape and Reel (TR)

Resistance :

340mOhm

Element Configuration :

Dual

Transistor Element Material :

SILICON

Turn On Delay Time :

10 ns

Number of Terminations :

6

Published :

2003

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Fall Time (Typ) :

12 ns

Current Rating :

-1.5A

Vgs(th) (Max) @ Id :

2V @ 1mA

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G6

Mount :

Surface Mount

Base Part Number :

*J1

Rds On (Max) @ Id, Vgs :

215m Ω @ 1.5A, 4.5V

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

45 ns

Continuous Drain Current (ID) :

1.5A

Power Dissipation :

1.25W

Transistor Application :

SWITCHING

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Voltage - Rated DC :

-20V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

ECCN Code :

EAR99

Number of Pins :

5

Threshold Voltage :

-2V