PUMH18,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 NPN - Pre-Biased (Dual)

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Power Dissipation :

300mW

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Resistor - Base (R1) :

4.7k Ω

Max Power Dissipation :

300mW

Height :

1.1mm

Max Breakdown Voltage :

50V

Collector Base Voltage (VCBO) :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Length :

2.2mm

Lead Free :

Lead Free

Ambient Temperature Range High :

150°C

Number of Terminations :

6

Polarity :

NPN

Terminal Form :

Gull wing

Resistor - Emitter Base (R2) :

10k Ω

Vce Saturation (Max) @ Ib, Ic :

100mV @ 500µA, 10mA

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Emitter Base Voltage (VEBO) :

7V

Max Junction Temperature (Tj) :

150°C

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Pin Count :

6

hFE Min :

50

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

100mV

Mount :

Surface Mount

Min Operating Temperature :

-65°C

Current - Collector Cutoff (Max) :

1μA

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Voltage (VCEO) :

50V

Width :

1.35mm

ECCN Code :

EAR99

Number of Elements :

2

Published :

2005