PUMH10,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Max Junction Temperature (Tj) :

150°C

Mounting Type :

Surface Mount

Height :

1.1mm

HTS Code :

8541.21.00.95

Collector Emitter Voltage (VCEO) :

50V

Surface Mount :

yes

Polarity :

NPN

Collector Emitter Saturation Voltage :

100mV

Power - Max :

300mW

Qualification Status :

Not Qualified

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Base Part Number :

P*MH10

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Published :

2011

hFE Min :

100

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

6

Max Collector Current :

100mA

Number of Elements :

2

Resistor - Base (R1) :

2.2k Ω

Transistor Type :

2 NPN - Pre-Biased (Dual)

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Form :

Gull wing

Power Dissipation :

200mW

RoHS Status :

ROHS3 Compliant

Ambient Temperature Range High :

150°C

Number of Terminations :

6

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

1μA

Resistor - Emitter Base (R2) :

47k Ω

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

4 Weeks

Collector Base Voltage (VCBO) :

50V

Terminal Finish :

Tin (Sn)

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)