PUMH10,125

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Packaging :

Tape and Reel (TR)

Polarity :

NPN

Radiation Hardening :

No

Published :

2011

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-65°C

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Number of Terminations :

6

Resistor - Base (R1) :

2.2k Ω

Number of Elements :

2

Number of Pins :

6

Mount :

Surface Mount

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Max Collector Current :

100mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Pin Count :

6

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Max Power Dissipation :

300mW

Base Part Number :

P*MH10

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Current - Collector Cutoff (Max) :

1μA

Terminal Form :

Gull wing

Resistor - Emitter Base (R2) :

47k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

2 NPN - Pre-Biased (Dual)