PUMH10,125

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

Factory Lead Time :

4 Weeks

Max Operating Temperature :

150°C

Max Power Dissipation :

300mW

Transistor Type :

2 NPN - Pre-Biased (Dual)

Polarity :

NPN

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

2.2k Ω

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Element Configuration :

Dual

Max Collector Current :

100mA

Resistor - Emitter Base (R2) :

47k Ω

Terminal Finish :

Tin (Sn)

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

50V

Number of Terminations :

6

Base Part Number :

P*MH10

Current - Collector Cutoff (Max) :

1μA

Published :

2011

Radiation Hardening :

No

Min Operating Temperature :

-65°C

JESD-609 Code :

e3

Pin Count :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21

Package / Case :

6-TSSOP, SC-88, SOT-363