PUMH10,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Terminal Form :

Gull wing

Power Dissipation :

200mW

Emitter Base Voltage (VEBO) :

5V

hFE Min :

100

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Collector Emitter Saturation Voltage :

100mV

ECCN Code :

EAR99

Package / Case :

6-TSSOP, SC-88, SOT-363

Height :

1.1mm

Max Junction Temperature (Tj) :

150°C

Transistor Type :

2 NPN - Pre-Biased (Dual)

Qualification Status :

Not Qualified

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Surface Mount :

yes

Transistor Element Material :

SILICON

Published :

2011

Number of Terminations :

6

Base Part Number :

P*MH10

Resistor - Base (R1) :

2.2k Ω

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Resistor - Emitter Base (R2) :

47k Ω

Number of Elements :

2

Power - Max :

300mW

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

50V

Current - Collector Cutoff (Max) :

1μA

Terminal Finish :

Tin (Sn)

Polarity :

NPN

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Factory Lead Time :

4 Weeks

HTS Code :

8541.21.00.95

Ambient Temperature Range High :

150°C

JESD-609 Code :

e3

Max Collector Current :

100mA

REACH SVHC :

No SVHC