PUMH10,115
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- Mfr.Part #
- PUMH10,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS 2NPN PREBIAS 0.3W 6TSSOP
- Stock
- 2,633
- In Stock ：
- 2,633
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Current - Collector Cutoff (Max) :
- 1μA
- Transistor Element Material :
- SILICON
- Height :
- 1.1mm
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 250µA, 5mA
- Emitter Base Voltage (VEBO) :
- 5V
- Max Junction Temperature (Tj) :
- 150°C
- HTS Code :
- 8541.21.00.95
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 200mW
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2011
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 5V
- Max Collector Current :
- 100mA
- Polarity :
- NPN
- Terminal Form :
- Gull wing
- Power - Max :
- 300mW
- Base Part Number :
- P*MH10
- Number of Pins :
- 6
- Ambient Temperature Range High :
- 150°C
- Resistor - Base (R1) :
- 2.2k Ω
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 2
- Mounting Type :
- Surface Mount
- Pin Count :
- 6
- Surface Mount :
- yes
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- hFE Min :
- 100
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 100mV
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Resistor - Emitter Base (R2) :
- 47k Ω
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 6
- Datasheets
- PUMH10,115
PUMH10,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Nexperia USA Inc. stock available at
Features of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMH10,115 include a low saturation voltage, low collector-emitter saturation voltage, and a high current gain. They also feature a low noise figure and a high switching speed.
Applications of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMH10,115 include use in audio amplifiers, power supplies, and motor control circuits. They can also be used in switching applications, such as in power switches and relays.
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