PUMH10,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

HTS Code :

8541.21.00.95

Height :

1.1mm

Published :

2011

Resistor - Emitter Base (R2) :

47k Ω

Power - Max :

300mW

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

1μA

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Base Voltage (VCBO) :

50V

Terminal Finish :

Tin (Sn)

Resistor - Base (R1) :

2.2k Ω

Collector Emitter Saturation Voltage :

100mV

Terminal Form :

Gull wing

Pin Count :

6

Max Collector Current :

100mA

Power Dissipation :

200mW

hFE Min :

100

Collector Emitter Voltage (VCEO) :

50V

JESD-609 Code :

e3

Surface Mount :

yes

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Transistor Type :

2 NPN - Pre-Biased (Dual)

Transistor Application :

SWITCHING

Number of Elements :

2

Max Junction Temperature (Tj) :

150°C

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Number of Terminations :

6

Mounting Type :

Surface Mount

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Factory Lead Time :

4 Weeks

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

6

Ambient Temperature Range High :

150°C

Base Part Number :

P*MH10

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant