PUMF12,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Power Dissipation :

300mW

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Resistor - Emitter Base (R2) :

47k Ω

Max Output Current :

-100A

Terminal Finish :

Tin (Sn)

Min Operating Temperature :

-65°C

Frequency - Transition :

100MHz

Operating Supply Voltage :

-50V

Package / Case :

6-TSSOP, SC-88, SOT-363

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V / 120 @ 1mA 6V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 200mV @ 5mA, 50mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.1

Radiation Hardening :

No

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

40V

Polarity :

NPN, PNP

Pin Count :

6

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Resistor - Base (R1) :

22k Ω

Factory Lead Time :

8 Weeks

Terminal Form :

Gull wing

Published :

2002

Number of Terminations :

6

Number of Elements :

2

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

1μA

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

150mV

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

Transition Frequency :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Max Breakdown Voltage :

40V

Peak Reflow Temperature (Cel) :

260