PUMF12,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Collector Emitter Breakdown Voltage :

40V

Mount :

Surface Mount

Max Collector Current :

100mA

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

1μA

Number of Terminations :

6

Published :

2002

Terminal Form :

Gull wing

Max Breakdown Voltage :

40V

Min Operating Temperature :

-65°C

Number of Pins :

6

Resistor - Emitter Base (R2) :

47k Ω

Operating Supply Voltage :

-50V

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

ECCN Code :

EAR99

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Power Dissipation :

300mW

Frequency - Transition :

100MHz

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Max Output Current :

-100A

Mounting Type :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.1

Factory Lead Time :

8 Weeks

Resistor - Base (R1) :

22k Ω

Number of Elements :

2

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Polarity :

NPN, PNP

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

150mV

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 200mV @ 5mA, 50mA

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V / 120 @ 1mA 6V

Pin Count :

6

Transition Frequency :

100MHz